T. Ulma, H. Fuchsa, J.A. L´huilliera, A. Klehrb, B. Sumpfb, E. Gehrigc
Published in:
Opt. Commun., vol. 281, no. 8, pp. 2160-2166 (2008).
Abstract:
The amplification of ps and fs pulses with peak powers of up to 4.5 kW has been investigated in a single quantum well InGaAs tapered amplifier. The pulses with durations of 100 fs or 2 ps were generated by a modelocked titanium-sapphire laser. The amplified pulses indicate strong gain saturation and carrier generation due to photon absorption in the laser active region which causes a temporal broadening of the amplified pulses as well as modifications of the optical spectrum. The gain recovery time was measured by a pump-probe experiment. The experimental results are analyzed with respect to the sub-ps gain dynamics which is described by a relaxation time approximation.
a Department of Physics, Technical University of Kaiserslautern, Erwin-Schrödinger-Straße 46, D-67663 Kaiserslautern, Germany
b Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
c Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, United Kingdom
Keywords:
Ultrafast optics; Semiconductor optics; Diode lasers; Femtosecond lasers; Semiconductor optical amplifiers; Intraband relaxation; Self-phase modulation
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