A Hybrid 50-W GaN-HEMT Ku-Band Power Amplifier
F. Rautschke1, D. Maassen1, F. Ohnimus2, L. Schenk2, U. Dalisda2 and G. Boeck1,3
Published in:
Proc. 46th European Microwave Conf. (EuMC 2016), London, UK, Oct. 4-6, pp. 1079-1082 (2016).
Abstract:
In this paper the design, implementation, and experimental results of a Ku-band 50 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A 250 nm bare-die device has been chosen to achieve high saturated efficiency over the whole extended Ku-band uplink (13.75-14.5 GHz). The circuit was realized in a hybrid microwave integrated circuit (MIC) technology on an alumina substrate. The PA shows a measured performance of more than 40 W output power for a continuous wave (CW) signal with a PAE higher than 21 %. Modulated measurements (QPSK) demonstrate an output power of more than 30 W (50 W peak) and 21 % PAE, while holding the linearity requirements specified by Eutelsat.
1 Microwave Engineering Laboratory, Berlin Institute of Technology, Berlin, Germany
2 Rohde&Schwarz GmbH&Co.KG, Munich / Berlin, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Index Terms:
Digital video broadcasting, gallium nitride, HEMTs, microwave circuits, power amplifiers, satellite ground stations.
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