A Highly Survivable 3-7 GHz GaN Low-Noise Amplifier
M. Rudolph1 , R. Behtash1, K. Hirche2, J. Würfl1, W. Heinrich1, G. Tränkle1
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., San Francisco, USA, Jun. 11-16, ISBN 0-7803-9541-7, pp. 1899-1902 (2006).
Abstract:
A highly rugged low-noise GaN MMIC amplifier is presented that operates in the frequency band 3-7 GHz. A noise figure NF below 2.3 dB is measured from 3.5 to 7 GHz, with NF < 1:8 dB between 5 and 7 GHz. The survivability of the LNA was assessed by several stress-tests, injecting in the input up to 36 dBm at 4 GHz for 16 hours. To the authors knowledge, these are the most severe survivability tests for these circuits reported in the literature so far.
1 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Tesat-Spacecom GmbH & Co. KG, Gerberstr. 49, D-71522 Backnang, Germany
Keywords:
Amplifier noise, Integrated circuit noise, Microwave FET amplifiers, MMIC amplifiers, Noise, Semiconductor device noise
© 2006 The IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.