H. Klockenhoff, R. Behtash, J. Würfl, W. Heinrich, and G. Tränkle

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., San Francisco, USA, Jun. 11-16, ISBN 0-7803-9541-7, pp. 1846-1849 (2006).

Abstract:

GaN MMIC power amplifiers for X-Band applications are presented delivering more than 16 W of cw output power while being extremely small in chip size. With a single-device amplifier on a 1.8x2.2 mm² chip 7.8 W output power at 8 GHz are achieved with a maximum PAE of 44%. On a chip of 2.2x3.3 mm² size only, a two-stage amplifier is realized with 18 dB of linear gain and 16 W cw output power at 8 GHz. PAE of the MMIC reaches 30%.

Keywords:

Gallium Nitride, MMIC Power Amplifier, X-Band, Coplanar Wave Guide (CPW)

© 2006 The IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Full version in pdf-format.