A 40 Gbps GaAs-HBT Distributed Amplifier with an Over-fT Cut-Off Frequency: Analytical and Experimental Study
C. Meliani, M. Rudolph, and W. Heinrich
Published in:
IEEE MTT-S Int. Microw. Symp. Dig., Long Beach, USA, Jun. 17, ISBN 0-7803-8845-3, pp. 1857-1860 (2005).
Abstract:
The bandwidth potential of HBT distributed amplifiers following the traveling-wave concept (TWA) is studied. Basic parameters are the transistor characteristics as well as the losses of the artificial transmission lines. As a result, a relation between fT and fmax of the HBTs and the -3dB cut-off frequency of the amplifier is derived. Based on this, an over-fT cut-off-frequency TWA is realized with 6 dB broadband gain and 42 GHz fc using GaAs HBTs with 36 GHz fT and 170 fmax.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
Index Terms:
Distributed amplifier, GaAs, HBT, fT, fmax.
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