A 270 GHz Push-Push Oscillator in InP-DHBT-on-BiCMOS Technology
M. Hossain, N. Weimann, O. Krueger, V. Krozer and W. Heinrich
Published in:
Proc. 44th European Microwave Conf. (EuMC 2014), Rome, Italy, Oct. 6-9, pp. 588-591 (2014).
Abstract:
A 270-GHz reflection-type push-push oscillator is presented, realized using 0.8µm emitter InP-DHBTs. The InP DHBT-on-BiCMOS offers both InP HBT and BiCMOS technologies but in this case only the InP part is used. The transistors exhibit a maximum oscillation frequency fmax of 300 GHz. The oscillator delivers -9.5 dBm output power. DC consumption is only 31 mW from a 1.8 volts power supply, which corresponds to 0.4 % overall DC-to-RF efficiency.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
Index Terms:
InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC) oscillators, reflection oscillator, sub-terahertz (THz), transferred-substrate.
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