A 246 GHz Hetero-Integrated Frequency Source in InP-on-BiCMOS Technology
M. Hossain1, T. Kraemer1, I. Ostermay1, T. Jensen1,2, B. Janke1, Y. Borokhovych3,4, M. Lisker3, S. Glisic3,5, M. Elkhouly3, J. Borngraeber3, B. Tillack3, C. Meliani3, O. Krueger1, V. Krozer1, and W. Heinrich1
Published in:
IEEE Microwave Wireless Compon. Lett., vol. 24, no. 7, pp. 469-471 (2014).
Abstract:
A 246 GHz source in InP-on-BiCMOS technology is presented. It consists of a voltage controlled oscillator (VCO) in BiCMOS technology and a frequency tripler in transferred-substrate InP-HBT technology, which is integrated on top of the BiCMOS MMIC in a wafer-level bonding process. The VCO operates at 82 GHz with 6 dBm output power and the combined circuit delivers -10 dBm at 246 GHz, with a phase noise of -87 dBc/Hz at 2 MHz offset. To the knowledge of the authors, this is the first hetero-integrated signal source in this frequency range reported so far. The results illustrate the potential of the hetero integrated process for sub-mm-wave frequencies.
1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Technical University of Denmark, 2800 Kongens Lyngby, Denmark
3 Innovations for High Performance Microelectronics, Leibniz-Institut fuer Inovative Mikroelektronik, Frankfurt/Oder, Germany
4 TES Electronic Solutions, Stuttgart 70567, Germany
5 Silicon Radar, Frankfurt, Germany
Index Terms:
Frequency multipliers, frequency tripler, hetero-integration, InP-DHBT, SiGe-BiCMOS, transferred-substrate (TS), voltage controlled oscillator (VCO).
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