A 0.5 THz Signal Source with -11 dBm Peak Output Power Based on InP DHBT
M. Hossain1, N. Weimann1,3, M. Brahem1, O. Ostinelli2, C.R. Bolognesi2, W. Heinrich1 and V. Krozer1
Published in:
49th European Microwave Conference (EuMC 2019), Paris, France, Oct. 1-3, pp. 856-859 (2019).
Abstract:
This paper presents a 0.5 THz oscillator, realized using a transferred-substrate (TS) 0.3 µm InP DHBT process. It delivers -11 dBm peak output power. The DC consumption is only 15 mW from a 1.6 volts power supply, which corresponds to 0.5 % peak DC-to-RF efficiency. The oscillator exhibits the highest efficiency of a millimeter-wave frequency source beyond 400 GHz reported to date. The core area of the circuit is only 0.6 × 0.6 mm2.
1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2 Millimeter-Wave Electronics Group, ETH-Zürich, CH-8092 Zürich, Switzerland
3 Department Components for High Frequency Electronics, University of Duisburg-Essen, 47057 Duisburg, Germany
Keywords:
InP double heterojunction bipolar transistor (DHBT), monolithic microwave integrated circuit (MMIC) oscillators, reflection oscillator, terahertz (THz), transferred substrate (TS).
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