9 W output power from a 808 nm tapered diode laser in pulsed mode operation with nearly diffraction-limited beam quality
F. Dittmar, A. Klehr, B. Sumpf, A. Knauer, J. Fricke, G. Erbert, G. Tränkle
Published in:
IEEE 20th International Semiconductor Laser Conference (ISLC 2006), Kohala Coast, HI, USA, Sep. 8-21, ISBN 0-7803-9560-3, pp. 35-36 (2006).
Abstract:
808 nm tapered diode lasers are fabricated based on a SLOC structure with very small divergence of 18°. 14 W overall output power with 9 W of nearly diffraction-limited beam quality are presented.
Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
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