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970 nm DBR Broad-Area Semiconductor Lasers with 60% Conversion Efficiency

P. Crump, Md. J. Miah, J. Fricke, M. Wilkens, S. Kreutzmann, H. Wenzel, and A. Knigge

Published in:

27th International Semiconductor Laser Conference (ISLC), Potsdam, Germany, Oct. 10-14, ISBN 978-1-6654-4133-9, WP3.6 (2021).

Abstract:

Progress in epitaxial design to enhance power and efficiency of spectrally-stabilized broad-area lasers at operating wavelength 970nm is presented. 200µm wide and 4mm long DBR lasers with a highly-asymmetric epitaxy provide 14W CW-mode power at 60% efficiency with 0.6nm spectral width (95% power).

Ferdinand-Braun-Institut gGmbH, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

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