70 W GaN-HEMT Ku-Band Power Amplifier in MIC Technology
D. Maassen1, F. Rautschke1, F. Ohnimus2, L. Schenk2, U. Dalisda2, and G. Boeck1,3
Published in:
IEEE Trans. Microwave Theory Tech., vol. 65, no. 4, pp. 1272-1283 (2017).
Abstract:
In this paper the design, implementation, and experimental results of a Ku-band 70 W GaN-HEMT power amplifier (PA) for satellite communication are presented. A two-stage design approach with two 250 nm bare-die devices has been chosen to achieve a considerably high saturated gain of 15 dB over the whole extended Ku-band (13.75-14.5 GHz). The circuit was realized in a hybrid microwave integrated circuit technology on an alumina substrate. The PA shows a measured performance of more than 50 W output power for a continuous-wave signal with a power-added efficiency (PAE) higher than 23%. Modulated measurements demonstrate an average output power of more than 30 W (70 W peak) and 21% PAE, while holding the Eutelsat linearity requirements.
1 Department of Microwave Engineering, Berlin Institute of Technology, 10587 Berlin, Germany
2 Rohde & Schwarz GmbH & Co. KG, 12489 Berlin, Germany
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
Index Terms:
GaN, HEMTs, microwave circuits, power amplifiers (PAs), predistortion linearizers, satellite communications.
Copyright © 2017 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
Full version in pdf-format.