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Patente

2 W reliable operation of λ = 735 nm GaAsP/AlGaAs laser diodes

B. Sumpf, G. Beister, G. Erbert, J. Fricke, A. Knauer, W. Pittroff, P. Ressel, J. Sebastian, H. Wenzel, and G. Tränkle

Published in:

Electron. Lett., vol. 37, no.6, pp. 351-353 (2001).

Abstract:

Reliable operation of 735 nm laser diodes based on a tensile-strained GaAsP quantum well embedded in an AlGaAs large optical cavity structure is reported. The 100 µm stripe width laser diodes were aged at a record high output power of 2 W for 2000 hours. The degradation rates were < 3.6 × 10-5h-1.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Albert-Einstein-Straße 11, 12489 Berlin, Germany

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