190-fs Semiconductor Disk Laser and Tapered Diode Amplifier with Ultrafast Pulse Picking
P. Klopp1, U. Griebner1, M. Zorn2, A. Klehr2, A. Liero, M. Weyers, and G. Erbert
Published in:
European Conf. on Lasers and Electro-Optics and the European Quantum Electronics Conf. (CLEO Europe - EQEC 2009), Munich, Germany, Jun. 14-19, paper CB-1.3-MON (2009).
Abstract:
Optically-pumped semiconductor disk lasers (SDLs) promise to be versatile femtosecond sources, because they can be tailored for almost any wavelength. Very recently, by passive mode-locking of SDLs with a semiconductor saturable absorber mirror (SESAM), pulse durations as short as 290 fs and 260 fs were demonstrated in the 1-mum wavelength range. Here, we investigate the laser parameters important for short-pulse performance and present 190-fs pulses from a diode-pumped InGaAs/AlGaAs laser emitting around 1045 nm. By this, we improved the record for semiconductor lasers without external pulse compression. Furthermore, we showed the feasibility of a new tapered diode amplifier with ultrafast electrical pumping for pulse amplification and picking, giving free choice of pulse repetition frequency.
1 Max Born Institute, Max-Born-Str. 2a, D-12489 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
© 2009 OSA/CLEOE/EQEC. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the OSA/CLEOE/EQEC.
Full version in pdf-format.