1.38 W Tunable High-Power Narrow-Linewidth External-Cavity Tapered Amplifier at 670 nm
M. Chi1, G. Erbert2 , B. Sumpf2, and P.M. Petersen1
Published in:
Conf. on Lasers and Electro-Optics (CLEO/QELS), San Jose, CA, May 16-21, paper JTuD99 (2010).
Abstract:
A diffraction-limited narrow-linewidth diode laser system based on a tapered amplifier in external cavity is demonstrated. 1.38 W output power is obtained. The laser system is tunable from 659 to 675 nm.
1 Department of Photonics Engineering, Technical University of Denmark, P.O. Box 49, DK-4000 Roskilde, Denmark
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
OCIS Codes:
(140.5960) Semiconductor lasers; (140.3280) Laser amplifiers
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