1180nm DBR-ridge waveguide lasers with strain compensation layers in the active region for lifetime improvement
K. Paschke, G. Blume, A. Ginolas, J. Hofmann, D. Feise, W. John, N. Werner, F. Bugge
Published in:
25th International Semiconductor Laser Conference (ISLC 2016), Kobe, Japan, Sep. 12-15, p. WD3 (2016).
Abstract:
DBR ridge waveguide lasers at 1180nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 1000h at 100mW and are believed to be a key component for miniaturized SHG laser modules emitting in the yellow spectral range.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
Copyright © IEICE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from IEICE.
Full version in pdf-format.