A. Müller, C. Zink, J. Fricke, F. Bugge, O. Brox, G. Erbert, B. Sumpf

Published in:

Proc. SPIE 10123, Photonics West, San Francisco, USA, Jan 28 - Feb 02, 101231B (2017).

Abstract:

A 1030 nm distributed Bragg reflector (DBR) tapered diode laser with optimized vertical layer structure and lateral design is presented. At a heatsink temperature of 15°C the developed laser provides up to 16 W of optical output power. The maximum electro-optical efficiency is 57%. Intrinsic wavelength stabilization is obtained by a 7th order DBR grating and results in a narrowband emission over the whole power range. Ion implantation next to the ridge-waveguide is applied in order to suppress propagation of unwanted lateral side modes. The highest diffraction-limited central lobe power measured for this device is 9.1 W. With these properties the presented high brightness laser is suitable for applications such as nonlinear frequency conversion.

Keywords:

Diode laser, tapered diode laser, distributed Bragg reflector, narrow bandwidth, high brightness.

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