J.-P. Koester, M. Radziunas, A. Zeghuzi, H. Wenzel, A. Knigge

Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system

Opt. Quantum Electron., vol. 51, no. 10, pp. 334 (2019).

F.B. Gutsch, O. Fartmann, C.L. Zimmermann, V. Schkolnik, A. Peters, M. Krutzik, F. Böhle, M. Lezius, R. Holzwarth, A. Bawamia, C. Pyrlik, A. Wicht

Towards a Strontium Beam Optical Reference Based on the ¹S₀ → ³P₁ Intercombination Line on a Sounding Rocket

Joint Conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum (EFTF/IFC), Orlando, USA, Apr. 14-18 (2019).

E. Beyatli, B. Sumpf, G. Erbert, and U. Demirbas

Efficient Tm:YAG and Tm:LuAG lasers pumped by red tapered diodes

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, ca-7.2 (2019).

C. Zink, M. Maiwald, H. Wenzel, B. Sumpf and G. Tränkle

Monolithic master oscillator with tapered power amplifier diode laser at 1060 nm with additional control section for high power operation

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-3.1 (2019).

B. Arar, C. Kürbis, H. Wenzel, and A. Wicht

Determination of the Residual Amplified Spontaneous Emission in Single-Mode Semiconductor Optical Amplifiers

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-4.4 (2019).

M. Tawfieq, J. Fricke, A. Müller, P. Della Casa, O. Brox, H. Wenzel, B. Sumpf and G. Tränkle

Widely tunable Watt-level MOPA systems emitting at 976 nm

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-4.5 (2019).

P. Albrodt, J. Hamperl, M. Niemeyer, P. Crump, P. Georges and G. Lucas-Leclin

Coherent superposition of pulsed high-brightness tapered amplifiers

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-4.6 (2019).

A. Knigge, G. Erbert, A. Klehr, A. Liero, J. Fricke, A. Maaßdorf, A. Zeghuzi, H. Wenzel, G. Tränkle

Wavelength stabilized 905 nm diode lasers in the 100 W class for automotive LiDAR

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-5.2 (2019).

M. Wilkens, G. Erbert, H. Wenzel, A. Maaßdorf, J. Fricke, P. Ressel, A. Knigge, P. Crump

Efficient Narrow Stripe Ridge Waveguide Lasers for Single-Spatial Mode Operation up to 2.5 W

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-5.3 (2019).

M.M. Karow, D. Martin, P. Della Casa, G. Erbert, and P. Crump

Narrower Far Field and Higher Efficiency in 1 kW Diode-Laser Bars Using Improved Lateral Structuring

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-5.4 (2019).

P. Crump, C. Frevert, A. Maaßdorf, S. Knigge, G. Erbert and G. Tränkle

Efficient, High Power Pumps for Mid-IR Solid State Lasers Enabled by 200 K Operation of 808 nm Diode Lasers

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-5.5 (2019).

K. Häusler, H. Wenzel, J. Fricke, S. Kreutzmann, and A. Knigge

Optimization of 808 nm DBR RW Laser Bars for Operation at Low Noise and High Reliability

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-5.6 (2019).

H. Christopher, A. Wicht, A. Peters, G. Tränkle

A micro-integrated mode-locked extended-cavity diode laser emitting in the wavelength range around 780 nm

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-8.4 (2019).

A. Klehr, A. Liero, H. Wenzel, A. Zeghuzi, A. Maaßdorf, J. Fricke, A. Knigge

Polarisation-Resolved Investigations of the Pico- and Nanosecond Dynamics of Broad Area Distributed Bragg Reflector Lasers under Very High-Current Pulse Excitation

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-10.6 (2019).

L.S. Theurer, M. Maiwald, J. Fricke, P. Ressel, B. Sumpf, G. Tränkle

Dual-Wavelength Y-Branch DBR-RW Diode Laser at 785 nm with Adjustable Spectral Distance from 0 up to 1.6 nm

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-p.29 (2019).

P. Sauer, D. Auth, C. Weber, A. Klehr, A. Knigge, and S. Breuer

Passively mode-locked quantum-well semiconductor laser subject to ultra-short optical self-feedback with nanometric fine-delay

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cb-p.43 (2019).

J.O. Gwaro, C. Brenner, B. Sumpf, A. Klehr, J. Fricke and M.R. Hofmann

Continuous wave THz source based on an electrically tunable monolithic two-color semiconductor diode laser

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, cc-7.1 (2019).

M. Christ, A. Wicht, and M. Krutzik

Development and qualification of miniaturized, UHV-compatible optical systems for integrated atomic quantum technologies

Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2019), Munich, Germany, Jun. 23-27, ISBN: 978-1-7281-0469-0, ea-p.26 (2019).

P. Albrodt, M. Niemeyer, P. Crump, J. Hamperl, F. Moron, P. Georges, and G. Lucas-Leclin

Coherent beam combining of high power quasi continuous wave tapered amplifiers

Opt. Express, vol. 27, no. 20, pp. 27891-27901 (2019).

T. Kaul, G. Erbert, A. Klehr, A. Maaßdorf, D. Martin, and P. Crump

Impact of Carrier Nonpinning Effect on Thermal Power Saturation in GaAs-Based High Power Diode Lasers

IEEE J. Sel. Top. Quantum Electron., vol. 25, no. 6, pp. 1501910 (2019).

A. Zeghuzi, H.-J. Wünsche, H. Wenzel, M. Radziunas, J. Fuhrmann, A. Klehr, U. Bandelow, and A. Knigge

Time-Dependent Simulation of Thermal Lensing in High-Power Broad-Area Semiconductor Lasers

IEEE J. Sel. Top. Quantum Electron., vol. 25, no. 6, pp. 1502310 (2019).

B. Herzog, B. Lingnau, M. Kolarczik, S. Helmrich, A.W. Achtstein, K. Thommes, F. Alhussein, D. Quandt, A. Strittmatter, U.W. Pohl, O. Brox, M. Weyers, U. Woggon, K. Lüdge, N. Owschimikow

Broadband Semiconductor Light Sources Operating at 1060 nm Based on InAs:Sb/GaAs Submonolayer Quantum Dots

IEEE J. Sel. Top. Quantum Electron., vol. 25, no. 6, pp. 1900310 (2019).

T. Kolbe, A. Knauer, J. Enslin, S. Hagedorn, A. Mogilatenko, T. Wernicke, M. Kneissl, M. Weyers

Influence of substrate off-cut angle on the performance of 310 nm light emitting diodes

J. Cryst. Growth, vol. 526, pp. 125241 (2019).

F. Hühn, A. Wentzel and W. Heinrich

Highly compact GaN-based all-digital transmitter chain including SPDT T/Rx switch for massive MIMO applications

Int. J. Microwave Wireless Technolog., vol. 11, no. 7, pp. 609-617 (2019).

T. Shivan, E. Kaule, M. Hossain, R. Doerner, T. Johansen, D. Stoppel, S. Boppel, W. Heinrich, V. Krozer and M. Rudolph

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

Int. J. Microwave Wireless Technolog., vol. 11, no. 7, pp. 635-644 (2019).

P. Della Casa, D. Martin, A. Maaßdorf, T. Adam, A. Ties, M. Beier, K. Häusler, A. Knigge and M. Weyers

High power broad-area lasers with buried implantation for current confinement

Semicond. Sci. Technol., vol. 34, no. 10, pp. 105005 (2019).

C. Schuster, L. Schynol, A. Wentzel, F. Hühn, E. Polat, S. Schmidt, R. Jakoby, W. Heinrich, and H. Maune

Concept for Continuously Tunable Output Filters for Digital Transmitter Architectures

IEEE Access, vol. 7, pp. 123490-123504 (2019).

J. Weinrich, A. Mogilatenko, F. Brunner, C.T. Koch, and M. Weyers

Extra half-plane shortening of dislocations as an origin of tensile strain in Si-doped (Al)GaN

J. Appl. Phys., vol. 126, no. 08, pp. 085701 (2019).

J.-P. Koester, M. Radziunas, A. Zeghuzi, H. Wenzel and A. Knigge

Traveling Wave Model Based Simulation of Tunable Multi-Wavelength Diode Laser Systems

19th International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD 2019), ISBN 978-1-7281-1647-1, Ottawa, Canada, Jul. 8-12, pp. 75-76 (2019).

M. Hübner, I. Will, J. Körner, J. Reiter, M. Lenski, J. Tümmler, J. Hein, B. Eppich, A. Ginolas and P. Crump

Novel High-Power, High Repetition Rate Laser Diode Pump Modules Suitable for High-Energy Class Laser Facilities

MDPI instruments, vol. 3, no. 3, pp. 34 (2019).

K. Tetzner, E. Bahat Treidel, O. Hilt, A. Popp, S. Bin Anooz, G. Wagner, A. Thies, K. Ickert, H. Gargouri, and J. Würfl

Lateral 1.8 kV β-Ga₂O₃ MOSFET With 155 MW/cm² Power Figure of Merit

IEEE Electron Device Lett., vol. 40, no. 9, pp. 1503-1506 (2019).

D. Monti, C. De Santi, S. Da Ruos, F. Piva, J. Glaab, J. Rass, S. Einfeldt, F. Mehnke, J. Enslin, T. Wernicke, M. Kneissl, G. Meneghesso, E. Zanoni, and M. Meneghini

High-Current Stress of UV-B (In)AlGaN-Based LEDs: Defect-Generation and Diffusion Processes

IEEE Trans. Electron Devices, vol. 66, no. 8, pp. 3387-3392 (2019).

K. Dahl, P. Cebeci, O. Fitzau, M. Giesberts, C. Greve, M. Krutzik, A. Peters, S.A. Pyka, J. Sanjuan, M. Schiemangk, T. Schuldt, K. Voss, A. Wicht

A New Laser Technology for LISA

Proc.SPIE 11180, International Conference on Space Optics (ICSO 2018), Chania, Greece, Oct.9-12, 111800C (2019).

A. Bawamia, C. Kürbis, R. Smol, A. Wicht

Semiconductor laser modules for precision spectroscopy applications in space

Proc.SPIE 11180, International Conference on Space Optics (ICSO 2018), Chania, Greece, Oct.9-12, 111805C (2019).

M. Christ, A. Kassner, R. Smol, A. Bawamia, A. Peters, M. Wurz, E. Rasel, A. Wicht and M. Krutzik

Integrated Atomic Quantum Technologies in Demanding Environments: Development and Qualification of Miniaturized Optical Setups and Integration Technologies for UHV and Space Operation

Proc.SPIE 11180, International Conference on Space Optics (ICSO 2018), Chania, Greece, Oct.9-12, 1118088 (2019).

K. Döringshoff, F.B. Gutsch, V. Schkolnik, C. Kürbis, M. Oswald, B. Pröbster, E.V. Kovalchuk, A. Bawamia, R. Smol, T. Schuldt, M. Lezius, R. Holzwarth, A. Wicht, C. Braxmaier, M. Krutzik, and A. Peters

Iodine Frequency Reference on a Sounding Rocket

Phys. Rev. Applied, vol. 11, no. 5, pp. 054068 (2019).

J. Pahl, A.N. Dinkelaker, C. Grzeschik, J. Kluge, M. Schiemangk, A. Wicht, A. Peters, and M. Krutzik

Compact and robust diode laser system technology for dual-species ultracold atom experiments with rubidium and potassium in microgravity

Appl. Opt., vol. 58, no. 20, pp. 5456-5464 (2019).

M. Bauer, A. Rämer, S.A. Chevtchenko, K.Y. Osipov, D. Cibiraite, S. Pralgauskaite, K. Ikamas, A. Lisauskas, W. Heinrich, V. Krozer, and H.G. Roskos

A High-Sensitivity AlGaN/GaN HEMT Terahertz Detector With Integrated Broadband Bow-Tie Antenna

IEEE Trans. Terahertz Sci. Technol., vol. 9, no. 4, pp. 430-444 (2019).

J. Ruschel, J. Glaab, B. Beidoun, N. Lobo Ploch, J. Rass, T. Kolbe, A. Knauer, M. Weyers, S. Einfeldt, and M. Kneissl

Current-induced degradation and lifetime prediction of 310 nm ultraviolet light-emitting diodes

Photonics Res., vol. 7, no. 7, pp. B36-B40 (2019).

M. Brahem, A. Mogilatenko, D. Stoppel, D. Berger, S. Hochheim, D. Rentner, I. Ostermay, M. Reiner, S. Boppel, K. Nosaeva, N. Weimann

Thermally stable iridium contacts to highly doped p-In_0:53Ga_0:47As for indium phosphide double heterojunction bipolar transistors

Microelectron. Eng., vol. 215, pp. 111017 (2019).

T. Shivan, M. Hossain, R. Doerner, S. Schulz, T. Johansen, S. Boppel, W. Heinrich and V. Krozer

Highly linear 90-170 GHz SPDT Switch with High Isolation for Fully Integrated InP Transceivers

IEEE MTT-S Int. Microw. Symp. Dig., Boston, USA, Jun. 2-7, pp. 1011-1014 (2019).

T. Shivan, M. Hossain, R. Doerner, S. Schulz, T. Johansen, S. Boppel, W. Heinrich and V. Krozer

A 175 GHz Bandwidth High Linearity Distributed Amplifier in 500 nm InP DHBT Technology

IEEE MTT-S Int. Microw. Symp. Dig., Boston, USA, Jun. 2-7, pp. 1253-1256 (2019).

F. Hühn, A. Wentzel, W. Heinrich

A Reconfigurable Modulator for Digital Outphasing Transmitters

IEEE MTT-S Int. Microw. Symp. Dig., Boston, USA, Jun. 2-7, pp. 1480-1483 (2019).

A. Wentzel, C. Schuster, R. Jakoby, H. Maune, W. Heinrich

Reconfigurable GaN Digital Tx Applying BST Bandpass Filter

IEEE MTT-S Int. Microw. Symp. Dig., Boston, USA, Jun. 2-7, pp. 1484-1487 (2019).

A. Müller, M. Maiwald, and B. Sumpf

Compact Diode Laser-Based Dual-Wavelength Master Oscillator Power Amplifier at 785 nm

IEEE Photonics Technol. Lett., vol. 31, no. 13, pp. 1120-1123 (2019).

M. Tawfieq, J. Kabitzke, J. Fricke, P. Della Casa, A. Ginolas, P. Ressel, H. Wenzel, B. Sumpf, G. Tränkle

Characterization and comparison between two coupling concepts of four-wavelength monolithic DBR ridge waveguide diode laser at 970 nm

Appl. Phys. B, vol. 125, no. 3, p. 125:50 (2019).

A. Barh, M. Tawfieq, B. Sumpf, C. Pedersen, and P. Tidemand-Lichtenberg

Upconversion spectral response tailoring using fanout QPM structures

Opt. Lett., vol. 44, no. 11, pp. 2847-2850 (2019).

U. Arz, K. Kuhlmann, T. Dziomba, G. Hechtfischer, G.N. Phung, F.J. Schmückle, and W. Heinrich

Traceable Coplanar Waveguide Calibrations on Fused Silica Substrates up to 110 GHz

IEEE Trans. Microwave Theory Tech., vol. 67, no. 6, pp. 2423-2432 (2019).

S. Walde, S. Hagedorn, and M. Weyers

Impact of intermediate high temperature annealing on the properties of AlN/sapphire templates grown by metalorganic vapor phase epitaxy

Jpn. J. Appl. Phys., vol. 58, no. SC, pp. SC1002 (2019).

A. Knauer, T. Kolbe, J. Rass, H.K. Cho, C. Netzel, S. Hagedorn, N. Lobo-Ploch, J. Ruschel, J. Glaab, S. Einfeldt, and M. Weyers

High power UVB light emitting diodes with optimized n-AlGaN contact layers

Jpn. J. Appl. Phys., vol. 58, no. SC, pp. SCCC02 (2019).

M. Brendel, S. Hagedorn, F. Brunner, M. Reiner, U. Zeimer, and M. Weyers

Degradation of AlGaN-based metal-semiconductor-metal photodetectors

Jpn. J. Appl. Phys., vol. 58, no. SC, pp. SCCC21 (2019).

A.N. Dinkelaker, A. Kaparthy, S.E. Reher, M. Krutzik, A. Bawamia, C. Kürbis, R. Smol, H. Christopher, A. Wicht, P. Werner, J. Bartholomäus, S. Rotter, M.F. Barschke, R. Jördens

Optical Quantum Technologies for Compact Rubidium Vapor-cell Frequency Standards in Space Using Small Satellites

J. Br. Interplanet. Soc., vol. 72, no. 3, pp. 74-82 (2019).

N. Wolff and O. Bengtsson

Power Amplifier Supply Modulators

Wiley Encyclopedia of Electrical and Electronics Engineering, J.G. Webster (Ed.). doi:10.1002/047134608X.W8394 (2019).

F. Mahler, J.W. Tomm, K. Reimann, M. Woerner, V. Hoffmann, C. Netzel, M. Weyers, and T. Elsaesser

Time-resolved photoluminescence from n-doped GaN/Al_0.18Ga_0.82N short-period superlattices probes carrier kinetics and long-term structural stability

J. Appl. Phys., vol. 125, no. 18, pp. 185705 (2019).

G.N. Phung, F.J. Schmückle, R. Doerner, B. Kähne, T. Fritzsch, U. Arz, and W. Heinrich

Influence of Microwave Probes on Calibrated On-Wafer Measurements

IEEE Trans. Microwave Theory Tech., vol. 67, no. 5, pp. 1892-1900 (2019).

N. Wolff, W. Heinrich, O. Bengtsson

Class-G Supply Modulation for MIMO and Radar with Phased Array Antennas

12th German Microwave Conference (GeMiC 2019), Stuttgart, Germany, Mar. 25-27, ISBN 978-3-9812668-9-4, pp. 131-134 (2019).

G.N. Phung, F.J. Schmückle, R. Doerner, T. Fritzsch, S. Schulz, W. Heinrich

Crosstalk Effects of Differential Thin-Film Microstrip Lines in Multilayer Motherboards

12th German Microwave Conference (GeMiC 2019), Stuttgart, Germany, Mar. 25-27, ISBN 978-3-9812668-9-4, pp. 178-181 (2019); DOI: 10.23919/GEMIC.2019.8698163 .

F. Böhm, N. Nikolay, C. Pyrlik, J. Schlegel, A. Thies, A. Wicht, G. Tränkle and O. Benson

On-chip integration of single solid-state quantum emitters with a SiO₂ photonic platform

New J. Phys., vol. 21, no. 4, pp. 045007 (2019).

C. Kuhn, L. Sulmoni, M. Guttmann, J. Glaab, N. Susilo, T. Wernicke, M. Weyers, and M. Kneissl

MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

Photonics Res., vol. 7, no. 5, pp. B7-B11 (2019).

C. Nasser, P. Luo, F. Schnieder, M. Rudolph, and D. Ritter

Simulation of the RF Power Performance of a GaN HFET and Comparison to Experiment

IEEE Trans. Electron Devices, vol. 66, no. 5, pp. 2146-2150 (2019).

E. Beyatli, B. Sumpf, G. Erbert, and U. Demirbas

Efficient Tm:YAG and Tm:LuAG lasers pumped by 681 nm tapered diodes

Appl. Opt., vol. 58, no. 11, pp. 2973-2980 (2019).

M. Krüger, V.Z. Tronciu, A. Bawamia, C. Kürbis, M. Radziunas, H. Wenzel, A. Wicht, A. Peters, G. Tränkle

Improving the spectral performance of extended cavity diode lasers using angled-facet laser diode chips

Appl. Phys. B, vol. 125, no. 4, p. 125:66 (2019).

P. Luo, F. Schnieder, O. Bengtsson, V. Vadala, A. Raffo, W. Heinrich and M. Rudolph

A streamlined drain-lag model for GaN HEMTs based on pulsed S-parameter measurements

Int. J. Microwave Wireless Technolog., vol. 11, no. 2, pp. 121-129 (2019).

M. Radziunas, J. Fuhrmann, A. Zeghuzi, H.-J. Wünsche, T. Koprucki, C. Bree, H. Wenzel, U. Bandelow

Efficient coupling of dynamic electro-optical and heat-transport models for high-power broad-area semiconductor lasers

Opt. Quant. Electron., vol. 51, no. 3, pp. 869 (2019).

S. Hagedorn, S. Walde, A. Mogilatenko, M. Weyers, L. Cancellara, M. Albrecht, D. Jaeger

Stabilization of sputtered AlN/sapphire templates during high temperature annealing

J. Cryst. Growth, vol. 512, pp. 142-146 (2019).

M. Kastner, H. Wenzel, J. Schwarz, A. Knigge and G. Tränkle

Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers

Semicond. Sci. Technol., vol. 34, no. 03, pp. 035019 (2019).

J. Glaab, J. Ruschel, T. Kolbe, A. Knauer, J. Rass, H.K. Cho, N. Lobo Ploch, S. Kreutzmann, S. Einfeldt, M. Weyers, and M. Kneissl

Degradation of (In)AlGaN-Based UVB LEDs and Migration of Hydrogen

IEEE Photonics Technol. Lett., vol. 31, no. 7, pp. 529-532 (2019).

A. Zeghuzi, M. Radziunas, H.-J. Wünsche, J.-P. Koester, H. Wenzel, U. Bandelow, and A. Knigge

Traveling Wave Analysis of Non-Thermal Far-Field Blooming in High-Power Broad-Area Lasers

IEEE J. Quantum Electron., vol. 55, no. 2, pp. 2000207 (2019).

H.-E. Porteanu, I. Stefanovic, N. Bibinov, M. Klute, P. Awakowicz, R.-P. Brinkmann and W. Heinrich

Correlated mode analysis of a microwave driven ICP source

Plasma Sources Sci. Technol., vol. 28, no. 03, pp. 035013 (2019).

C. Pyrlik, J. Schlegel, F. Böhm, A. Thies, O. Krüger, O. Benson, A. Wicht, and G. Tränkle

Integrated Thermal Silica Micro-Resonator Waveguide System With Ultra-Low Fluorescence

IEEE Photonics Technol. Lett., vol. 31, no. 6, pp. 479-482 (2019).

M. Maiwald, B. Sumpf

Rapid and Adjustable Shifted Excitation Raman Difference Spectroscopy at 785 nm

Proc. SPIE 10894, Plasmonics in Biology and Medicine XVI, Photonics West, San Francisco, USA, Feb 1-6, 108940W (2019).

B. Sumpf, A. Müller and M. Maiwald

Tailored diode lasers - enabling Raman spectroscopy in the presence of disturbing fluorescence and background light

Proc. SPIE 10894, Plasmonics in Biology and Medicine XVI, Photonics West, San Francisco, USA, Feb 1-6, 1089411 (2019).

O. Fitzau, P. Betz, P. Cebeci, M. Giesberts, H.-D. Hoffmann, M. Schiemangk, A. Wicht, J. Sanjuan, K. Dahl, S. Amairi Pyka, E. Kovalchuk, A. Peters

Highly stable fiber lasers for satellite-based gravitational measurements

Proc. SPIE 10897, Fiber Lasers XVI: Technology and Systems, Photonics West, San Francisco, USA, Feb 1-6, 108972H (2019).

G. Blume, A. Koyucuoglu, J. Pohl, D. Feise, A. Sahm, and K. Paschke

Single mode 500 mW at 633 nm using all semiconductor master-oscillator and a dual stage amplifier

Proc. SPIE 10899, Components and Packaging for Laser Systems V, Photonics West, San Francisco, USA, Feb 1-6, 1089906 (2019).

M. Niemeyer, D. Martin, J. Pohl, M. Weyers, A. Knigge, P. Crump, H. Kissel and J. Biesenbach

High-power-class QCW Red Laser Bars and Stacks for Pump and Direct Application

Proc. SPIE 10900, High-Power Diode Laser Technology XVII, Photonics West, San Francisco, USA, Feb 1-6, 1090009 (2019).

D. Martin, P. Della Casa, T. Adam, C. Goerke, A. Thies, K. Häusler, O. Brox, H. Wenzel, P. Crump, M. Weyers, A. Knigge

Current Spreading Suppression by O- and Si-Implantation in high Power Broad Area Diode Lasers

Proc. SPIE 10900, High-Power Diode Laser Technology XVII, Photonics West, San Francisco, USA, Feb 1-6, 109000M (2019).

P. Albrodt, M.T. Jamal, A.K. Hansen, O.B. Jensen, M. Niemeyer, G. Blume, K. Paschke, P. Crump, J. Hamperl, P. Georges and G. Lucas-Leclin

Recent progress in brightness scaling by coherent beam combining of tapered amplifiers for efficient high power frequency doubling

Proc. SPIE 10900, High-Power Diode Laser Technology XVII, Photonics West, San Francisco, USA, Feb 1-6, 109000O (2019).

A. Sahm, N. Werner, J. Hofmann, D. Jedrzejczyk, D. Feise, K. Paschke

Miniaturized watt-level laser modules emitting in the yellow-green spectral range for biophotonic applications

Proc. SPIE 10902, Nonlinear Frequency Generation and Conversion: Materials and Devices XVIII, Photonics West, San Francisco, USA, Feb 1-6, 109020C (2019).

N. Werner, A. Sahm, R. Bege, D. Jedrzejczyk, D. Feise, A. Kaltenbach, F. Bugge, K. Paschke, G. Tränkle

Multi watt-level picosecond micro-laser sources in the yellow-green spectral range

Proc. SPIE 10902, Nonlinear Frequency Generation and Conversion: Materials and Devices XVIII, Photonics West, San Francisco, USA, Feb 1-6, 109021T (2019).

K. Häusler, J. Fricke, R. Staske, B. Eppich, and A. Knigge

Highly Reliable Low Noise Pump Sources for Solid State Lasers in Laser Communication Terminals

Proc. SPIE 10910, Free-Space Laser Communications XXXI, Photonics West, San Francisco, USA, Feb 1-6, 109100N (2019).

M. Schiemangk, A. Wicht, G. Tränkle

Ultra-narrow linewidth diode laser based on resonant optical feedback

Proc. SPIE 10910, Free-Space Laser Communications XXXI, Photonics West, San Francisco, USA, Feb 1-6, 109101U (2019).

B. Sumpf, J. Fricke, A. Ginolas, A. Maaßdorf, M. Maiwald, A. Müller, M. Tawfieq, L.S. Theurer, T.N. Vu, H. Wenzel

Tunable Y-branch dual-wavelength diode lasers in the VIS and NIR range for sensor applications

Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, Photonics West, San Francisco, USA, Feb 1-6, 1093913 (2019).

N. Surkamp, B. Döpke, C. Brenner, K. Orend, C. Baer, T. Musch, T. Prziwarka, A. Klehr, A. Knigge, M.R. Hofmann

Mode-locked diode lasers for THz asynchronous optical sampling

Proc. SPIE 10917, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications XII, Photonics West, San Francisco, USA, Feb 1-6, 109171C (2019).

D. Feise, D. Jedrzejczyk, D. Krug, N. Werner, F. Bugge, A. Maaßdorf, R.-St. Unger, P. Ressel, K. Paschke

High spectral radiance distributed Bragg reflector tapered diode lasers at 1060 nm with novel internal output DBR-grating

Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, Photonics West, San Francisco, USA, Feb 1-6, 109391F (2019).

A. Müller, C. Zink, K. Häusler, B. Sumpf

Reliability of high-power 1030 nm DBR tapered diode lasers with different lateral layouts

Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, Photonics West, San Francisco, USA, Feb 1-6, 109391G (2019).

C. Zink, M. Christensen, M.T. Jamal, A.K. Hansen, M. Maiwald, O.B. Jensen, B. Sumpf, and G. Tränkle

Investigation of controlled external feedback on the properties of low and high-power frequency stabilized diode lasers

Proc. SPIE 10939, Novel In-Plane Semiconductor Lasers XVIII, Photonics West, San Francisco, USA, Feb 1-6, 109391J (2019).

D. Stoppel, I. Ostermay, M. Hrobak, T. Shivan, M. Hossain, M. Reiner, N. Thiele, K. Nosaeva, M. Brahem, V. Krozer, S. Boppel, N. Halder, N. Weimann

NiCr resistors for terahertz applications in an InP DHBT process

Microelectron. Eng., vol. 208, pp. 1-6 (2019).

E. Bahat Treidel, O. Hilt, M. Wolf, L. Schellhase, A. Thies, J. Würfl

Vertical GaN n-channel MISFETs on ammonothermal GaN substrate: Temperature dependent dynamic switching characteristics

Mater. Sci. Semicond. Process., vol. 91, pp. 146-150 (2019).

P. Albrodt, M.T. Jamal, A.K. Hansen, O.B. Jensen, G. Blume, K. Paschke, P. Crump, P. Georges, and G. Lucas-Leclin

Coherent combining of high brightness tapered amplifiers for efficient non-linear conversion

Opt. Express, vol. 27, no. 2, pp. 928-937 (2019).

S. Fleischmann, E. Richter, A. Mogilatenko, M. Weyers, G. Tränkle

Influence of quartz on silicon incorporation in HVPE grown AlN

J. Cryst. Growth, vol. 507, pp. 295-298 (2019).

J. Jeschke, A. Mogilatenko, C. Netzel, U. Zeimer and M. Weyers

Influence of silicon doping on internal quantum efficiency and threshold of optically pumped deep UV AlGaN quantum well lasers

Semicond. Sci. Technol., vol. 34, no. 01, pp. 015005 (2019).

A. Mogilatenko, A. Knauer, U. Zeimer, C. Netzel, J. Jeschke, R.-S. Unger, C. Hartmann, J. Wollweber, A. Dittmar, U. Juda, M. Weyers, M. Bickermann

Crystal defect analysis in AlN layers grown by MOVPE on bulk AlN

J. Cryst. Growth, vol. 505, pp. 69-73 (2019).

Publikationen 2019

Servicenavigation