UV Laser Processing for Semiconductor Devices

O. Krügera, and R. Grundmüllerb

Published in:

Laser Technik Journal, vol. 10, no. 5, pp. 26-30 (2013).

Copyright © 2013 by WILEY-VCH Verlag GmbH & Co. KGaA,Weinheim. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from WILEY-VCH Verlag GmbH & Co. KGaA,Weinheim.


The application of reliable laser sources is well-established in several fields of industry including automotive, electronics, and medical manufacturing on macro, micro, and even nanometer scales [1]. In modern semiconductor technology, silicon is the dominating material. Further materials like gallium nitride (GaN) and silicon carbide (SiC) allow for higher operating frequencies and power levels, i. e., high-speed electronics and high-power applications. However, their chemical and physical properties do not only allow extending the limits of silicon-based device performance, but also call for alternative methods of processing.

a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
b InnoLas Systems GmbH, Justus-von-Liebig-Ring 8, 82152 Krailling, Germany