Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With fmax ∼ 0.53 THz

N.G. Weimann1, T.K. Johansen2, D. Stoppel3, M. Matalla3, M. Brahem3, K. Nosaeva3, S. Boppel3, N. Volkmer3, I. Ostermay3, V. Krozer3, O. Ostinelli4, and C.R. Bolognesi4

Published in:

IEEE Trans. Electron Devices, vol. 65, no. 9, pp. 3704-3710 (2018).

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We report on the realization of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4-µm-wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies.

1 Components for High Frequency Electronics Department (BHE), Faculty of Engineering, University of Duisburg-Essen, 47057 Duisburg, Germany
2 Electromagnetic Systems Group, Department of Electrical Engineering, Technical University of Denmark, 2800 Kongens Lyngby, Denmark
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
4 Millimeter-Wave Electronics Group, ETH Zürich, 8092 Zürich, Switzerland

Index Terms:

Gallium arsenide antimonide, heterojunction bipolar transistors, indium phosphide, millimeter-wave (mm-wave) integrated circuits, submillimeter-wave (sub-mm-wave) integrated circuits.