Towards a Large-Signal Noise Model for GaN HEMT Devices

M. Rudolph1, R. Doerner2

Published in:

Proc. 8th European Microwave Integrated Circuits Conf. (EuMIC 2013), Nuremberg, Germany, Oct. 6-8, pp. 484-487 (2013).

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This paper proposes a bias-dependent description of the HEMT noise sources that is optimized with respect to implementation in large-signal compact models. The noise is described as a function of drain current instead of smallsignal parameters like the transconductance in order to maintain consistency between the small-signal and large-signal world.

1 Brandenburg University of Technology, Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, D-03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany


MODFETs, noise, semiconductor device modeling, semiconductor device noise modeling