Towards a Large-Signal Noise Model for GaN HEMT Devices

M. Rudolph1, R. Doerner2

Published in:

Proc. 8th European Microwave Integrated Circuits Conf. (EuMIC 2013), Nuremberg, Germany, Oct. 6-8, pp. 484-487 (2013).

Copyright © EuMA 2013. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the EuMA.

Abstract:

This paper proposes a bias-dependent description of the HEMT noise sources that is optimized with respect to implementation in large-signal compact models. The noise is described as a function of drain current instead of smallsignal parameters like the transconductance in order to maintain consistency between the small-signal and large-signal world.

1 Brandenburg University of Technology, Ulrich L. Rohde Chair of RF and Microwave Techniques, Siemens-Halske-Ring 14, D-03046 Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, D-12489 Berlin, Germany

Keywords:

MODFETs, noise, semiconductor device modeling, semiconductor device noise modeling