Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers
Semicond. Sci. Technol., vol. 34, no. 03, pp. 035019 (2019).
Copyright © 2019 IOP Publishing Ltd. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IOP Publishing Ltd.
We present a new theoretical design for diode lasers which should be capable of generating sub-100-ps pulses with pulse energies of more than 10 nJ per 100-µm-contact width by active Q-switching. We show that the carrier-induced reduction of the refractive index in the active layer, i.e. the vertical anti-index guiding effect, results in a dependence of the optical confinement factor on the carrier density which can be exploited for a further enhancement of the pulse energy and a reduction of the pulse length.
1 Robert Bosch GmbH, Herrenwiesenweg 24, 71701 Schwieberdingen, Germany
2 Ferdinand-Braun-Institut, Leibniz-Insitut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
semiconductor laser, diode laser, high-power, picosecond pulse, anti-index guiding, Q-switching