Theoretical investigation of anti-index guiding inactively Q-switched two-section diode lasers

M. Kastner1, H. Wenzel2, J. Schwarz1, A. Knigge2 and G. Tränkle2

Published in:

Semicond. Sci. Technol., vol. 34, no. 03, pp. 035019 (2019).

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We present a new theoretical design for diode lasers which should be capable of generating sub-100-ps pulses with pulse energies of more than 10 nJ per 100-µm-contact width by active Q-switching. We show that the carrier-induced reduction of the refractive index in the active layer, i.e. the vertical anti-index guiding effect, results in a dependence of the optical confinement factor on the carrier density which can be exploited for a further enhancement of the pulse energy and a reduction of the pulse length.

1 Robert Bosch GmbH, Herrenwiesenweg 24, 71701 Schwieberdingen, Germany
2 Ferdinand-Braun-Institut, Leibniz-Insitut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany


semiconductor laser, diode laser, high-power, picosecond pulse, anti-index guiding, Q-switching