Temperature-Dependent Charge Carrier Diffusion in  Direction of GaN Determined by Luminescence Evaluation of Buried InGaN Quantum Wells
phys. stat. sol. (b), vol. 257, no. 6, pp. 2000016, doi:10.1002/pssb.202000016 (2020).
Copyright © 2020 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial-NoDerivs License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non-commercial and no modifications or adaptations are made.
Temperature-dependent transport of photoexcited charge carriers through a nominally undoped, c-plane GaN layer toward buried InGaN quantum wells is investigated by continuous-wave and time-resolved photoluminescence spectroscopy. The excitation of the buried InGaN quantum wells is dominated by charge carrier diffusion through the GaN layer; photon recycling contributes only slightly. With temperature decreasing from 310 to 10 K, the diffusion length in  direction increases from 250 to 600 nm in the GaN layer. The diffusion length at 300 K also increases from 100 to 300 nm when increasing the excitation power density from 20 to 500 W cm-2. The diffusion constant decreases from the low-temperature value of ∼7 to 1.5 cm2s-1 at 310 K. The temperature dependence of the diffusion constant indicates that the diffusivity at room temperature is limited by optical phonon scattering. Consequently, higher diffusion constants in GaN-based devices require a reduced operation temperature. To increase diffusion lengths at afixed temperature, the effective recombination time has to be prolonged by reducing the number of nonradiative recombination centers.
a Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany
b Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489 Berlin, Germany
diffusion constants, diffusion lengths, gallium nitride