Publikationen

H.-E. Porteanu, I. Stefanović, M. Klute, P. Awakowicz, R.P. Brinkmann, and W. Heinrich

Nonlinear Transport in Microwave-Generated Plasma

IEEE Trans. Plasma Sci., vol. 54, no. 4, pp. 1471-1473 (2026).

C. Netzel, T. Kolbe, J. Enslin, and M. Weyers

Temperature dependence of charge carrier diffusion in GaN and AlGaN layers

J. Appl. Phys., vol. 139, no. 17, pp. 175701, doi:10.1063/5.0325176 (2026).

X. Geng, C. Kuring, B. Kohlhepp, O. Hilt, and S. Dieckerhoff

Gate Drive Circuit for Noninsulating Gate GaN-Transistors Enabling Fast Switching and High-Frequency Operation

IEEE Open J Ind Appl, vol. 7, pp. 291, doi:10.1109/OJIA.2026.3664217 (2026).

S. Schwertfeger, E. Da Ros, M. Bursy, A. Wicht, D. Pardo, A. Sharma, S. Sachidananda, A. Ling, M. Krutzik

A 698 nm laser system for excitation of fluorescent quantum light sources on a CubeSat mission

Acta Astronaut., vol. 243, pp. 91-98, doi:10.1016/j.actaastro.2026.01.060 (2026).

M. Maiwald, K. Sowoidnich, A. Müller

Shifted excitation Raman difference spectroscopy - a key tool for real-world applications

Proc. of SPIE, vol. 13869, Plasmonics in Biology and Medicine XXIII, Photonics West, San Francisco, USA, Jan 17-22, 1386906 (2026).

M. Bursy, A. Bawamia, T. Flisgen, N. Goossen-Schmidt, L. Günther, M. Krutzik, C. Luplow, M. Schiemangk, S. Schwertfeger, C. Tyborski, A. Wicht

Ultra-compact optical isolators for micro-integrated photonic modules

Proc. of SPIE, vol. 13875, Components and Packaging for Lasers and PICs XII, Photonics West, San Francisco, USA, Jan 17-22, 1387507 (2026).

F. Mauerhoff, G. Blume, D. Feise, A. Sahm, and K. Paschke

Miniaturized 619nm Laser Modules with Wavelength Stabilization via VBGs and FBGs

Proc. of SPIE, vol. 13875, Components and Packaging for Lasers and PICs XII, Photonics West, San Francisco, USA, Jan 17-22, 138750F (2026).

S. Arslan, S.K. Khamari, C. Zink, S.J. Sweeney and P. Crump

Longitudinal current profile modification for higher brightness in GaAs-based high-power diode lasers

Proc. of SPIE, vol. 13876, High-Power Diode Laser Technology XXIV, Photonics West, San Francisco, USA, Jan 17-22, 1387609 (2026).

M. Hübner, M. Wilkens, S. Arslan, L. Wittenbecher, J. Zender, B. Eppich, D. Martin, P. Della Casa, A. Ginolas, P.S. Basler, N. Lobo-Ploch, P. Crump, M. Rozycki, A. Schultze, U. Tradowsky, A. Knaub, H. Alder

Brightness and efficiency scaling of a 1kW direct diode laser module emitting at 780nm for additive manufacturing of aluminum

Proc. of SPIE, vol. 13876, High-Power Diode Laser Technology XXIV, Photonics West, San Francisco, USA, Jan 17-22, 138760F (2026).

P. Crump, S. Arslan, A. Luferau, E. Bahat Treidel, J.E. Boschker, B. Eppich, K. Häusler, A. Maaßdorf, R.-S. Unger, D. Martin and A. Knigge

Perspectives on the performance scaling of high-power diode laser pumps for use in Inertial Fusion Energy Systems

Proc. of SPIE, vol. 13876, High-Power Diode Laser Technology XXIV, Photonics West, San Francisco, USA, Jan 17-22, 138760J (2026).

N. Werner, S.-A. Seeger, P. Hildenstein, F. Mauerhoff, A. u. R. Sherwani, A. Sahm, L. Wittenbecher, J. Zender, D. Feise, S. Ramelow, and K. Paschke

Nonlinear Quantum Interferometer: Generating and Sensing Mid-Infrared Radiation for Cancer Diagnostics

Proc. of SPIE, vol. 13877, Nonlinear Frequency Generation and Conversion: Materials and Devices XXV, Photonics West, San Francisco, USA, Jan 17-22, 1387703 (2026).

F. Behlau, N. Surkamp, S.L. Schenk, S. Wohlfeil, A. Knigge, M.R. Hofmann, C. Esen, A. Ostendorf

Combination of diode laser-based two-photon polymerization and masked stereolithography for microfluidic chip fabrication

Proc. of SPIE, vol. 13884, Laser 3D Manufacturing XIII, Photonics West, San Francisco, USA, Jan 17-22, 1388406 (2026).

M. Maiwald, K. Sowoidnich, A. Müller

Dual-wavelength diode lasers for SERDS as enabling light sources to improve Raman spectroscopy

Proc. of SPIE, vol. 13887, Photonic Technologies in Plant and Agricultural Science III, Photonics West, San Francisco, USA, Jan 17-22, 1388702 (2026).

K. Sowoidnich, A. Müller, M. Maiwald

Molecule-specific soil analysis using shifted excitation Raman difference spectroscopy – From laboratory investigations towards field deployment of portable sensors

Proc. of SPIE, vol. 13887, Photonic Technologies in Plant and Agricultural Science III, Photonics West, San Francisco, USA, Jan 17-22, 1388703 (2026).

E. Freier, J. Glaab, J. Enslin, M. Guttmann, S. Makhladi, A. Mogilatenko, C. Netzel, C. Stoellmacker, S. Einfeldt

Long-term stable single-mode AlInGaN laser diodes by overcoming degradation mechanisms

Proc. of SPIE, vol. 13896, Gallium Nitride Materials and Devices XXI, Photonics West, San Francisco, USA, Jan 17-22, 138960I (2026).

S.-A. Seeger, N. Werner, P. Hildenstein, A. Sahm, L. Wittenbecher, J. Zender, D. Feise, G. Blume, and K. Paschke

Building a micro-integrated laser module with fiber coupling at 720 nm: design, simulation and verification

Proc. of SPIE, vol. 13903, Optical Interconnects and Packaging 2026, Photonics West, San Francisco, USA, Jan 17-22, 1390310 (2026).

D. Feise, S.-A. Seeger, G. Blume, H. Wenzel, P. Della Casa, and K. Paschke

Semiconductor master-oscillator power-amplifier emitting 8 W at 785 nm

Proc. of SPIE, vol. 13912, Novel In-Plane Semiconductor Lasers XXV, Photonics West, San Francisco, USA, Jan 17-22, 1391205 (2026).

A. Jalehdoost, K. Sowoidnich, A. Müller, D. Feise, K. Paschke, B. Sumpf, M. Maiwald

Monolithic Y-Branch DBR diode laser with emission at 633 nm as excitation light source for Raman and SERDS investigations

Proc. of SPIE, vol. 13912, Novel In-Plane Semiconductor Lasers XXV, Photonics West, San Francisco, USA, Jan 17-22, 1391208 (2026).

A. Müller, K. Sowoidnich, M. Maiwald

Dual-wavelength diode lasers for background-free Raman spectroscopic measurements

Proc. of SPIE, vol. 13912, Novel In-Plane Semiconductor Lasers XXV, Photonics West, San Francisco, USA, Jan 17-22, 139120C (2026).

M. Meneghini, F. Piva, N. Roccato, J. Pacuk, M. Pilati, S. Longato, C. De Santi, M. Buffolo, N. Susilo, M. Schilling, D. Hauer Vidal, A. Muhin, L. Sulmoni, J. Höpfner, J. Ruschel, J. Glaab, J. Rass, S. Einfeldt, T. Wernicke, M. Kneissl, N. Trivellin, G. Meneghesso, E. Zanoni

Link between defects, quantum efficiency and degradation trends in UV-C LEDs

Proc. of SPIE, vol. 13913, Light-Emitting Devices, Materials, and Applications XXX, Photonics West, San Francisco, USA, Jan 17-22, 1391307 (2026).

J. Hamperl, M. Gärtner, N. Goossen-Schmidt, M. Bursy, S. Kubitza, S. Nozinic, M. Schiemangk, C. Tyborski, M. Martinez-Dorantes, E. Vogt, and A. Wicht

Micro-integrated light control units for optical fiber length stabilization in strontium-based optical atomic clocks

Proc. of SPIE, vol. 13920, Quantum Sensing, Imaging, and Precision Metrology IV, Photonics West, San Francisco, USA, Jan 17-22, 1392008 (2026).

G. Blume, P. Hildenstein, F. Mauerhoff, S. Ramelow, K. Paschke

Experimental maximum in type-0 colinear SPDC in ppKTP for varying focusing conditions

Proc. of SPIE, vol. 13920, Quantum Sensing, Imaging, and Precision Metrology IV, Photonics West, San Francisco, USA, Jan 17-22, 139200U (2026).

A. Tsarapkin, L. Zurak, K. Maćkosz, L. Löffler, V. Deinhart, I. Utke, T. Feichtner, and K. Höflich

Double Helical Plasmonic Antennas

Adv. Funct. Mater., vol. 36, no. 20, pp. 2507471, doi:10.1002/adfm.202507471 (2026).

J. Ruschel, C. Stölmacker, N. Lobo-Ploch, J.E. Boschker, N. Kemf, J. Glaab, T. Filler, T. Musengezi, J. Rass, H.K. Cho, M. Schilling, T. Wernicke, S. Knigge, M. Kneissl and S. Einfeldt

Impact of hermetic package and UV-induced self-cleaning on the reliability of UV LEDs

J. Phys. D: Appl. Phys., vol. 59, no. 7, pp. 075106 (2026).

L. Zens, A. Knigge, H. Wenzel, C. Brenner, M.R. Hofmann

Dispersion Measurement of Semiconductor Lasers Using Low-Coherence Holography

Electron. Lett., vol. 62, no. 1, pp. e70547, doi:10.1049/ell2.70547 (2026).

K. Tetzner, Z. Galazka, A. Thies, A. Külberg, and O. Hilt

Lateral Rutile GeO₂ MOSFET Devices on Single-Crystal r-GeO₂ Substrates

IEEE Electron Device Lett., vol. 47, no. 3, pp. 566-569, doi:10.1109/LED.2025.3638262 (2026).

S. Gündoğdu, L.M. Rektorschek, M.E. Stucki, M.H. van der Hoeven, T. Kolbe, S. Hagedorn, M. Weyers, T. Pregnolato, J.M. Bopp & T. Schröder

Hetero-integrated diamond-on-AlGaN/AlN waveguides for optical color center interfacing

npj Nanophoton., vol. 3, art. 9, doi:10.1038/s44310-025-00099-w (2026).

M. Grigoletto, J. Höpfner, M. Schilling, T. Ehlermann, L. Zeiler, P. Sonka, L. Sulmoni, T. Wernicke and M. Kneissl

Low resistance distributed polarization doped p-AlGaN layer for 265 nm LEDs operating at very high current densities

Semicond. Sci. Technol., vol. 41, no. 2, pp. 025019, doi:10.1088/1361-6641/ae44c5 (2026).

C. Elgvin, F.S. Hage, Ø. Prytz, K. Elyas, K. Hölich, C.T. Koch and H.C. Nerl

Advances in momentum-resolved EELS of phonons, excitons and plasmons in 2D materials and their heterostructures

Phys. Rev. Materials, vol. 10, no. 2, pp. 020201, doi:10.1103/8wwb-lxk2 (2026).

M. Placke, C. Lindner, F. Mann, I. Kviatkovsky, H.M. Chrzanowski, H. Bartolomaeus, F. Kühnemann, and S. Ramelow

Mid-IR hyperspectral imaging with undetected photons

Optica, vol. 13, no. 2, pp. 328-335, doi:10.1364/OPTICA.573220 (2026).

P. Sammeta, P. Della Casa, O. Brox, J. Fricke, R.-S. Unger, D. Rentner, B. King, P. Crump, M. Weyers, A. Knigge, G. Tränkle

Process development to realize all-semiconductor InGaP-GaAs based photonic-crystal surface emitting lasers

Micro Nano Eng., vol. 30, pp. 100354, doi:10.1016/j.mne.2026.100354 (2026).

J. Hirsch, S. Kubitza, M. Schiemangk, M. Schilling, and A. Wicht

A Tunable Optical Frequency Reference Module Based on a Volume Holographic Bragg Grating

IEEE Photonics J., vol. 18, no. 1, art. 5100107, doi:10.1109/JPHOT.2026.3654409 (2026).

D. Welch, M. Buonanno, C. Petersen, I. Shuryak, T. Filler, N. Lobo-Ploch, D.J. Brenner

Virus inactivation and skin safety studies using far-UVC LEDs

Photochem Photobiol., vol. 102, no. 1, pp. 48-56, doi:10.1111/php.14115 (2026).

M. Schilling, F. Biebler, T. Ehlermann, P. Vierck, M. Grigoletto, J. Höpfner, T. Wernicke, and M. Kneissl

Charge carrier concentrations in linearly graded distributed polarization-doped layers from AlN to Al_0.8Ga_0.2N and their effect on the far-UVC LED performance

J. Appl. Phys., vol. 139, no. 1, pp. 015702, doi:10.1063/5.0297365 (2026).

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