Single Image Spectral Electroluminescence (Photon Emission) of GaN HEMTs

P. Scholz, A. Glowacki, U. Kerst, C. Boit, P. Ivo, R. Lossy*, H.-J. Würfl*, Y. Yokoyama**

Published in:

IEEE Int. Reliab. Phys. Symp. (IRPS), Monterey, CA, USA, Apr. 14-18, pp. CD.3.1-CD.3.7. (2013).

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Abstract:

Continuous spectra of GaN HEMT photon emission were detected with prism-based optical path. Full spectra are obtained with single emission images by expansion of the emission spot to a spectral tail. Therefore, multi-finger HEMTs require FIB inactivation of excess fingers to ensure single finger operation. The extracted parameter is electron temperature correlated to kinetic energy of the 2DEG electrons. It is fieldrelated and scales with gate voltage, in agreement with device simulation. No spectral peaks were detected.

TUB Berlin University of Technology, Einsteinufer 19, D-10587 Berlin, Germany
* Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
** Hamamatsu Photonics GmbH, Arzbergerstr. 10, D-82211 Herrsching, Germany

Keywords:

GaN; HEMT; PEM; prism; spectral analysis; FIB; device modification.