Simulation of an Integrated UTC-Photodiode with a High-Speed TIA for 5G mm-Wave Generation

D. Konstantinou1,2, C. Caillaud2, T. Shivan3, S. Rommel2, U. Johannsen1, F. Blache2, F. Mallecot2, V. Krozer3, and I.T. Monroy1

Published in:

Int. Conf. on Numerical Simulation of Optoelectronic Devices (NUSOD), free online, Sep. 14-18, ISBN 978-1-7281-6086-3, pp. 25-26 (2020).

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This work introduces a subsystem level co-simulation for generation, boosting and transmission of millimeter wave signals for 5G applications. The simulation processes to model the full equivalent circuit of uni-traveling carrier photodiodes based on reflection coefficient measurements are analyzed. The optoelectronic lumped equivalent is co-integrated with a transimpedance amplifier design synthesized by high speed transistors. The proposed broadband component achieves competitive performance characteristics exhibiting high gain.

1 Eindhoven University of Technology, 5600 MB Eindhoven, Netherlands
2 III-V Lab, a joint Lab from Nokia, Thales and CEA, 91767 Palaiseau Cedex, France
3 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany

Index Terms:

UTC-PD, TIA, mm-waves, 5G technology.