Simulation and design of a compact GaAs based tunable dual-wavelength diode laser system

J.-P. Koester1, M. Radziunas2, A. Zeghuzi1, H. Wenzel1, A. Knigge1

Published in:

Opt. Quantum Electron., vol. 51, no. 10, pp. 334 (2019).

Copyright © Springer Science+Business Media, LLC, part of Springer Nature 2019. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the Springer Science+Business Media.


We present our design of a compact, integrated and tunable dual-wavelength diode laser system emitting around 785 nm, which is of interest for several applications like Raman spectroscopy and the generation of THz radiation. To achieve a more compact device compared to previous GaAs based designs two etch depths are realized, leading to shallowly etched ridge waveguides in regions were optical gain is applied and deeply etched waveguides used to enable compact integrated waveguide components. The device parameters are optimized using a numerically efficient simulation tool for passive waveguides. Subsequently, the entire laser system is further analyzed applying a sophisticated traveling-wave equation based model for active devices giving access to internal intensity and carrier density distributions. It is shown that active laser simulations are crucial to deduce critical and performance limiting design aspects not accessible via an all-passive simulation.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Weierstrass Institute for Applied Analysis and Stochastics, Mohrenstr. 39, 10117 Berlin, Germany


Tunable laser diodes, Dual-wavelength laser, Traveling-wave model.