Si Doping of GaN in Hydride Vapor-Phase Epitaxy

E. Richter1, T. Stoica2, U. Zeimer1, C. Netzel1, M. Weyers1 and G. Tränkle1

Published in:

J. Electron. Mater., vol. 42, no. 5, pp. 820-825 (2013).

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Growth of GaN boules by hydride vapor-phase epitaxy (HVPE) is very attractive for fabrication of GaN substrates. Use of dichlorosilane as a source for Si doping of bulk GaN is investigated. It is shown that no tensile strain is incorporated into mm-thick, Si-doped GaN layers on sapphire substrates if the threading dislocation density is previously reduced to 2.5 × 107 cm-2 or below. High-quality GaN layers with electron densities up to 1.5 × 1019 cm-3 have been achieved, and an upper limit of about 4 × 1019 cm-3 for Si doping of GaN boules was deduced considering the evolution of dislocations with thickness. A 2-inch, Si-doped GaN crystal with length exceeding 6 mm and targeted Si doping of about 1 × 1018 cm-3 is demonstrated.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, and Jülich-Aachen Research Alliance (JARA), 52425, Jülich, Germany


HVPE, GaN, bulk, Si doping, defects, strain.