RF-Power GaN Transistors with Tunable BST Pre-Matching

O. Bengtsson1, H. Maune2, A. Wiens2, S.A. Chevtchenko1, R. Jakoby2, and Wolfgang Heinrich1

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Seattle, USA, Jun 2-7, THPG-1 (2013).

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Abstract:

A thick-film Barium-Strontium-Titanate (BST) varactor is evaluated as gate pre-matching element for integration in discrete RF-power GaN-HEMTs. The tunable prematching is connected to the gate of a 2 mm GaN cell and characterized by load-pull measurements in the 2 to 3 GHz range. The assembly shows large tunable impedance range with low impact on power performance. At 2.0 GHz gain is reduced by 3.6 dB to 20 dB. The saturated output power at more than 37.8 dBm and the linearity are unaffected.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany
2 Institut für Mikrowellentechnik und Photonik, Technische Universität Darmstadt, 64283 Darmstadt, Germany

Index Terms:

Tunable Components, Gallium Nitride, Ferroelectrics, Power Amplifiers, Adaptive Matching.