Reliable 2 W DBR-tapered diode lasers lasing at 1180 nm based on highly strained quantum wells
IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 231-232 (2018).
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Distributed Bragg reflector tapered diode lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 2000 h at 2.0 W and are potential key components for miniaturized SHG laser modules emitting in the yellow spectral range.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany