Reliable 2 W DBR-tapered diode lasers lasing at 1180 nm based on highly strained quantum wells

K. Paschke, G. Blume, A. Ginolas, D. Feise, W. John, N. Werner, F. Bugge, B. Sumpf

Published in:

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 231-232 (2018).

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Distributed Bragg reflector tapered diode lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 2000 h at 2.0 W and are potential key components for miniaturized SHG laser modules emitting in the yellow spectral range.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany