Reliable 2 W DBR-tapered diode lasers lasing at 1180 nm based on highly strained quantum wells

K. Paschke, G. Blume, A. Ginolas, D. Feise, W. John, N. Werner, F. Bugge, B. Sumpf

Published in:

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 231-232 (2018).

Copyright © 2018 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract:

Distributed Bragg reflector tapered diode lasers at 1180 nm were developed based on strained InGaAs quantum wells. The lasers feature a lifetime of more than 2000 h at 2.0 W and are potential key components for miniaturized SHG laser modules emitting in the yellow spectral range.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany