Reconfigurable Packaged GaN Power Amplifier Using Thin-Film BST Varactors

S. Preis1, F. Lenze2, A. Wiens2, R. Jakoby2, W. Heinrich1, O. Bengtsson1

Published in:

Proc. 47th European Microwave Conf. (EuMC 2017), Nuremberg, Germany, Oct. 10-12, pp. 140-143 (2017).

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A compact and reconfigurable GaN HEMT power amplifier using thin-film BST varactors, mounted inside a customized RF package is presented. With tuning of input and output matching networks several advanced functionalities, e.g. efficient back-off operation, frequency agility, VSWR protection, and post tuning of mismatched loads can be realized. Two prototypes were manufactured and measured on a probe station and in a microstrip test fixture. The amplifier was characterized for varactor tuning voltages up to 24 V and delivered a maximum output power of 37.4 dBm and 58% PAE. Furthermore, the linearity of the amplifier under various tuning states was characterized by two-tone measurements. It shows no additional intermodulation compared to a bare GaN HEMT.

1 Ferdinand-Braun-Institut (FBH), Leibniz-Institut fuer Hoechstfrequenztechnik, 12489 Berlin, Germany
2 Technische Universitaet Darmstadt, Institut fuer Mikrowellentechnik und Photonik, 64283 Darmstadt, Germany


BST, ferroelectrics, gallium nitride, HEMTs, power amplifiers, varactors.