Reconfigurable package integrated 20W RF power GaN HEMT with discrete thick-film MIM BST varactors

S. Preis1, A. Wiens2, H. Maune2, W. Heinrich1, R. Jakoby2 and O. Bengtsson1

Published in:

Electron. Lett., vol. 52, no. 4, pp. 296–298 (2016).

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A novel package integrated solution for gallium nitride high-electron-mobility transistors with an electronically two-dimensional reconfigurable L-section matching network is presented. Thick-film barium-strontium-titanate (BST) varactors are used to realise a tunability of the load impedance of 1:2 in resistive and 1:1.5 in reactive parts, respectively, applying tuning voltages of up to 200 V. The tuneable module achieves a peak output power of 43.2 dBm (20.9W). Comparison with simulated results using field simulations and a large-signal model shows good agreement in terms of output power and power added efficiency and thus proves the concept of using metal-insulator-metal BST varactors for reconfigurability.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
2 Institut für Mikrowellentechnik und Photonik, Technische Universität Darmstadt, Darmstadt, Germany