Passively Cooled TM Polarized 808-nm Laser Bars With 70% Power Conversion at 80-W and 55-W Peak Power per 100-µm Stripe Width

P. Crump, H. Wenzel, G. Erbert, P. Ressel, M. Zorn, F. Bugge, S. Einfeldt, R. Staske, U. Zeimer, A. Pietrzak, G. Tränkle

Published in:

IEEE Photonics Technol. Lett., vol. 20, no. 16, pp. 1378-1380 (2008).

© Copyright 2008 IEEE - All Rights Reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

Abstract:

Many solid state laser systems rely on transversemagnetic polarized 808-nm diode lasers, whose efficiency is limited by the transparency current of the quantum well and whose peak power is limited by facet failure. Using optimized epitaxial growth, low voltage designs, and optimized facet reflectivity, we demonstrate 70% power conversion efficiency at 80 W in 1-cm laser bars under continuous-wave (CW) test conditions.We assess peak power limits in single emitters and find that 100-µm stripe lasers roll thermally under the CW condition at 13 W without failure, then reach >50 W under 300-ns pulse condition, where they fail at internal defects.

Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Keywords:

Power conversion, quantum wells, semiconductor lasers