Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates

M.-T. Wanga, F. Brunnerb, K.-Y. Liaoa, Y.-L. Lia, S.H. Tsenga, M. Weyersb

Published in:

J. Cryst. Growth, vol. 363, no. 1, pp. 109-112 (2013).

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Strain evolution in GaN layers grown on flat (FSS) and cone shaped patterned sapphire substrates (CPSS) is studied by in-situ reflectance and curvature measurements. Intrinsic growth strain and dislocation density are investigated in relation to different steps of the growth procedure. In spite of the typical tensile strain of GaN on sapphire, a clear compressive stress during growth is found when the lateral coalescence time is delayed. From the curvature measurement, the average compressive stress during GaN layer growth on CPSS before full coalescence is determined to be below 0.21 GPa. Subsequently, tensile stress of 0.25 GPa builds up as soon as the surface is closed. Using optimizing growth procedures with controlled stress profile enables nearly zero wafer bow in critical steps of the growth process.

a Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No. 1, Sec. 4, Roosevelt Road, Taipei 10617, Taiwan
b Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany


A1. Stresses; A3. Metalorganic chemical vapor deposition; B1. Nitrides; B2. Semiconducting III-V materials.