MOVPE growth of Al0.85Ga0.15As for high power laser diodes emitting at 808 nm
J. Cryst. Growth, vol. 370, pp. 221-225 (2013).
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Al0.85Ga0.15As cladding layers in 808 nm laser diodes grown by MOVPE result in inferior device performance when grown with the same growth parameters as the standard Al0.7Ga0.3As cladding layers. Using in-situ reflectance the interface between lower n-Al0.85Ga0.15As cladding and n-Al0.45Ga0.55As waveguide is found as the origin of deterioration due to 3-D growth of the cladding. The growth mode of Al0.85Ga0.15As was studied under different conditions, and the growth process was optimized to sustain 2-D growth throughout the structure. This way laser diodes with low divergence, a high slope efficiency and a high characteristic temperature are realized.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany
A1. Interfaces; A3. Metallorganic vapor phase epitaxy; A3. Quantum wells; B2. Semiconducting III-Vmaterials; B3. Laser diodes