MOVPE-grown AlGaN-based tunnel heterojunctions enabling fully transparent UVC LEDs

C. Kuhn1, L. Sulmoni1, M. Guttmann1, J. Glaab2, N. Susilo1, T. Wernicke1, M. Weyers2, and M. Kneissl1,2

Published in:

Photonics Res., vol. 7, no. 5, pp. B7-B11, DOI: 10.1364/PRJ.7.0000B7 (2019).

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We report on AlGaN-based tunnel heterojunctions grown by metalorganic vapor phase epitaxy enabling fully transparent UVC LEDs by eliminating the absorbing p-AlGaN and p-GaN layers. Furthermore, the electrical characteristics can be improved by exploiting the higher conductivity of n-AlGaN layers as well as a lower resistance of n-contacts. UVC LEDs with AlGaN:Mg/AlGaN:Si tunnel junctions exhibiting single peak emission at 268 nm have been realized, demonstrating effective carrier injection into the AlGaN multiple quantum well active region. The incorporation of a low band gap interlayer enables effective tunneling and strong voltage reduction. Therefore, the interlayer thickness is systematically varied. Tunnel heterojunction LEDs with an 8 nm thick GaN interlayer exhibit continuous-wave emission powers >3 mW near thermal rollover. External quantum efficiencies of 1.4% at a DC current of 5 mA and operating voltages of 20 V are measured on-wafer. Laterally homogeneous emission is demonstrated by UV-sensitive electroluminescence microscopy images. The complete UVC LED heterostructure is grown in a single epitaxy process including in situ activation of the magnesium acceptors.

1 Technische Universität Berlin, Institute of Solid State Physics, Hardenbergstr. 36, EW6-1, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany