Modeling the Noise of Transferred-Substrate InP DHBTs at Highest Frequencies

E. Kaule1, R. Doerner2, N. Weimann3,2, M. Rudolph1,2

Published in:

13th German Microwave Conference (GeMiC 2020), Cottbus, Germany, Mar. 09-11, ISBN 978-3-9820397-1-8, pp. 52-55 (2020).

© Copyright 2020 IEEE - All rights reserved and © IMA e.V. Ratingen, Germany. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE and IMA e.V.

Abstract:

This paper investigates noise modeling of transferred-substrate indium phosphide double heterobipolar transistors (InP DHBTs). It is shown that the shot noise of these devices exhibits a pronounced correlation which allows for a reliable extrapolation of the noise performance based on standard noise measurement at lower frequencies, or even on the knowledge of small-signal model parameters alone.

1 Brandenburg University of Technology Cottbus-Senftenberg (BTU), Cottbus, Germany
2 Ferdinand-Braun-Institut, Leibniz-Insitut für Höchstfrequenztechnik (FBH), Berlin, Germany
3 University of Duisburg-Essen, Duisburg, Germany

Keywords:

InP DHBT, noise, modeling, analysis, correlation.