Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz

S. Spießberger1, M. Schiemangk2, A. Sahm1, A. Wicht1, H. Wenzel1, A. Peters2, G. Erbert1, and G. Tränkle1

Published in:

Opt. Express, vol. 19, no. 8, pp. 7077-7083 (2011).

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We demonstrate a compact, narrow-linewidth, high-power, micro-integrated semiconductor-based master oscillator power amplifier laser module which is implemented on a footprint of 50 x 10 mm2. A micro-isolator between the oscillator and the amplifier suppresses optical feedback. The oscillator is a distributed Bragg reflector laser optimized for narrow-linewidth operation and the amplifier consists of a ridge waveguide entry and a tapered amplifier section. The module features stable singlemode operation with a FWHM linewidth of only 100 kHz and an intrinsic linewidth as small as 3.6 kHz for an output power beyond 1 W.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Strasse 4, 12489 Berlin, Germany
2 Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin, Germany

OCIS codes:

(290.3700) Linewidth; (140.5960) Semiconductor lasers; (140.3570) Lasers, single-mode; (140.2020) Diode lasers; (130.3120) Integrated optics devices; (060.1660) Coherent communications; (030.1640) Coherence; (230.1480) Bragg reflectors.