Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates

J.-R. van Look1, S. Einfeldt2, O. Krüger2, V. Hoffmann2, A. Knauer2, M. Weyers2, P. Vogt1, and M. Kneissl1

Published in:

IEEE Photonics Technol. Lett., vol. 22, no. 6, pp. 416-418 (2010).

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Abstract:

In this letter, a novel method for the fabrication of high-quality facets for III-nitride lasers grown on c-plane sapphire substrates as well as on GaN substrates is presented. Based on a laser scribing process gain-guided laser diodes with smooth facets were fabricated, which showed threshold current densities of 6.5 kA/cm2 at an emission wavelength of 405 nm under pulsed operation.

1 Institut für Festkörperphysik, TU Berlin, Hardenbergstraße 36, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Index Terms:

Cleaved facets, GaN, III-nitrides, InGaN, laser ablation, laser diodes, laser micromachining, laser scribing, materials processing, sapphire, semiconductor lasers.