InP-Si BiCMOS Heterointegration Using a Substrate Transfer Process

M. Liskera, A. Truscha, A. Krügera, M. Fraschkea, P. Kulsea, Y. Borokhovycha, B. Tillacka,b, I. Ostermayc, T. Krämerc, A. Thiesc, O. Krügerc, F.J. Schmücklec, V. Krozerc, W. Heinrichb,c

Published in:

ECS Trans., vol. 53, no. 3, 245-254 (2013).

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Abstract:

Broadband transmitters for radio links in the mm-wave range are key building blocks for future wireless communication systems. In this work such components are to be realized by means of an InPon- BiCMOS technology. This allows the combination of the power performance of III-V transistors with the advantages of BiCMOS circuits. Critical performance trade-offs can be avoided compared to the pure III-V or BiCMOS versions. In a first run the passive elements and the interconnects between InP and BiCMOS were fabricated. This test showed the feasibility of the wafer bond process for the heterointegration of InP and BiCMOS. An Al backend with silicon dioxide as interlayer dielectric was built on the silicon wafer. An Au metallization in benzocyclobutene as insulating dielectric represented the environment for the InP-HBTs. Thin film micro strip lines and special designed interconnects between the two metallization systems were characterized in dependence of frequencies up to 100 GHz.

a IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
b TU Berlin, HFT 4 Einsteinufer 25, 10587 Berlin, Germany
c Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany