Influence of quantum well barrier height on series resistance in GaAs-based broad area diode lasers
IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 117-118 (2018).
Copyright © 2018 IEEE - All rights reserved. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.
High efficiency GaAs-based lasers must have low resistance. However, resistance diverges as temperature reduces, for symmetric and asymmetric vertical structures, at diverse wavelengths, contrary to expectation from bulk mobilities. Resistance increases with quantum well depth and is reduced for p-doped quantum wells.
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany