Influence of quantum well barrier height on series resistance in GaAs-based broad area diode lasers

C. Frevert, S. Knigge, G. Erbert, F. Bugge, and P. Crump

Published in:

IEEE 26th International Semiconductor Laser Conference (ISLC 2018), Santa Fe, NM, USA, Sep. 16-19, pp. 117-118 (2018).

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Abstract:

High efficiency GaAs-based lasers must have low resistance. However, resistance diverges as temperature reduces, for symmetric and asymmetric vertical structures, at diverse wavelengths, contrary to expectation from bulk mobilities. Resistance increases with quantum well depth and is reduced for p-doped quantum wells.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany