In-situ etching of patterned GaAs/InGaP surfaces for highly efficient 975 nm DFB-BA diode lasers

A. Maaßdorf, C.M. Schultz, O. Brox, H. Wenzel, P. Crump, F. Bugge, A. Mogilatenko, G. Erbert, M. Weyers, G. Tränkle

Published in:

J. Cryst. Growth, vol. 370, pp. 226-229 (2013).

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Abstract:

In-situ etching with CBr4 has been used to form buried Bragg gratings in AlGaAs-based broad area diode lasers with distributed feedback (DFB-BA) by pattern transfer into In0.49Ga0.51P within the MOVPE reactor. STEM/EDXS measurements show that the Bragg grating is finally formed by 10 nm thick In0.49Ga0.51P stripes that are fully embedded in AlxGa1-xAs. The oxygen sheet concentration at the regrowth interface is found by SIMS to be below 1 × 1016 cm-2. DFB-BA lasers fabricated using in-situ etching of the grating reach optical output power > 12 W and peak wall-plug efficiencies > 60%.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany

Keywords:

A1. Secondary ion mass spectroscopy; A1. Scanning transmission electron microscopy; A1. In-situ etching; A3. Metalorganic vapour phase epitaxy; B3. Laser diodes