In situ etched gratings embedded in AlGaAs for efficient high power 970nm distributed feedback broad-area lasers

C.M. Schultz, P. Crump, A. Maaßdorf, O. Brox, F. Bugge, A. Mogilatenko, H. Wenzel, S. Knigge, B. Sumpf, M. Weyers, G. Erbert, and G. Tränkle

Published in:

Appl. Phys. Lett., vol. 100, no. 201115 (2012).

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Abstract:

We report optical nanostructuring technology, developed for distributed feedback gratings, broadly useable for many applications. The nanostructure is pre-structured into aluminum-free layers on top of AlGaAs then etched inside the epitaxy reactor and overgrown with AlGaAs. Oxygen contamination at the grating-interface is ~3x1011cm-2. These gratings introduce no extra internal optical loss and series resistance in broad-area lasers. Distributed feedback broad-area lasers using this technology achieve optical power >12 W, peak efficiency >60%, wide spectral locking range in current and heatsink temperature (over at least ~30°C) and operate at 10W for >5000 h in a preliminary reliability test.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany