In situ etched gratings embedded in AlGaAs for efficient high power 970nm distributed feedback broad-area lasers

C.M. Schultz, P. Crump, A. Maaßdorf, O. Brox, F. Bugge, A. Mogilatenko, H. Wenzel, S. Knigge, B. Sumpf, M. Weyers, G. Erbert, and G. Tränkle

Published in:

Appl. Phys. Lett., vol. 100, no. 201115 (2012).

© 2012 American Institute of Physics. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the American Institute of Physics.


We report optical nanostructuring technology, developed for distributed feedback gratings, broadly useable for many applications. The nanostructure is pre-structured into aluminum-free layers on top of AlGaAs then etched inside the epitaxy reactor and overgrown with AlGaAs. Oxygen contamination at the grating-interface is ~3x1011cm-2. These gratings introduce no extra internal optical loss and series resistance in broad-area lasers. Distributed feedback broad-area lasers using this technology achieve optical power >12 W, peak efficiency >60%, wide spectral locking range in current and heatsink temperature (over at least ~30°C) and operate at 10W for >5000 h in a preliminary reliability test.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany