High-Efficiency Broad-Ridge Waveguide Lasers

M. Wilkens1, H. Wenzel1, J. Fricke1, A. Maaßdorf1, P. Ressel1, S. Strohmaier2, A. Knigge1, G. Erbert1, and G. Tränkle1

Published in:

IEEE Photonics Technol. Lett., vol. 30, no. 6, pp. 545-548 (2018).

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Highly efficient single-spatial mode lasers with watt-level output power in the 9xx-nm wavelength range are of great interest for a variety of applications. We experimentally investigate the influence of the mesa widths on the electro-optical properties of ridge-waveguide lasers, based on an extreme double asymmetric epitaxial structure. These properties are, for example, the conversion efficiency and the maximum power of single-lateral mode operation (kink power). At an output power of almost 1 W, single-lateral mode operation with the highest efficiency of 60% was achieved with a 10-µm ridge-width laser. The highest peak efficiency of 62% and the highest output power of 2.7 W with still 59% efficiency were yielded by a laser with a ridge width of 15 µm, at the expense of a slightly deteriorated beam quality due to the involvement of a higher order lateral mode. The kink power of the 10-µm-ridge laser can be further increased by decreasing the front facet reflectivity from 2.5% to 0.5%.

1 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany
2  TRUMPF Laser GmbH, Niederlassung Berlin, 12489 Berlin, Germany

Index Terms:

Diode lasers, gallium arsenide, high power, ridge-waveguide lasers, single-spatial mode operation, quantum well lasers.