High Brightness, Narrow Bandwidth DBR Diode Lasers at 1120 nm

K. Paschke, H. Wenzel, C. Fiebig, G. Blume, F. Bugge, J. Fricke, and G. Erbert

Published in:

IEEE Photonics Technol. Lett., vol. 25, no. 20, pp. 1951-1954 (2013).

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Abstract:

In this letter, we report on monolithic distributed Bragg reflector ridge waveguide diode lasers. The lasers feature highly strained InGaAs quantum wells and fifth order surface gratings for a stabilized emission wavelength ∼1120 nm. Output powers up to 1 W and a maximum conversion efficiency of ∼34% were achieved in a spatial and spectral single-mode. In a preliminary reliability test, at 0.4 W a lifetime of > 1000 h could be demonstrated. Therefore, the laser sources should allow for an efficient non-linear frequency doubling to 560 nm.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Index Terms:

Diode laser, semiconductor laser, 1120 nm, high brightness, high spectral radiance.