GaN Digital Outphasing PA

T. Hoffmann, A. Wentzel, F. Hühn, and W. Heinrich

Published in:

49th European Microwave Conference (EuMC 2019), Paris, France, Oct. 1-3, pp. 551-554 (2019).

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This paper presents a novel GaN-based digital outphasing power amplifier for 800 MHz. The PA reaches a maximum output power of 5.8 W at 30 V final-stage drain supply voltage. A novel output combiner circuit is used and efficiency is improved by resonant commutation of the final-stages and optimized driver circuits for the two GaN push-pull final-stages. Power added efficiencies (PAE) of 59% and 25% at 0 dB and 10 dB power back-off (PBO), respectively, are achieved.

Ferdinand-Braun-Institut (FBH), Leibniz-Institut für Höchstfrequenztechnik, 12489 Berlin, Germany


Digital, power amplifiers, outphasing, resonant commutation, class-D, class-S, GaN.