GaAs-based Phase Modulator for Laser Radiation at 1070 nm
Conf. on Lasers and Electro-Optics/Europe and European Quantum Electronics Conf. (CLEO/Europe-EQEC 2015), Jun. 21-25, Munich, Germany, ISBN: 978-1-4673-7475-0, paper CD-P-40 (2015).
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We report the design and fabrication of a double heterostructure GaAs/AlGaAs ridge waveguide electro-optic phase modulator for frequency stabilization of a 1070 nm laser. The measured modulation efficiency using the Fabry-Perot technique is 13 deg/(V.mm).
Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany