Fast GaN based Schottky diodes on Si(111) substrate with low onset voltage and strong reverse blocking

E. Bahat-Treidel, O. Hilt, A. Wentzel, J. Würfl, and G. Tränkle

Published in:

phys. stat. sol. (c), vol. 10, no. 5, pp. 849-852 (2013).

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Abstract:

GaN-based heterostructure lateral Schottky barrier diodes (SBD) grown on Si(111) substrate are presented in this work. These SBDs own very low onset-voltage, VF = 0.50 V, high reverse blocking VBR > 600 V for LAC > 8 µm, very low capacitive charge of 0.415 nC/A and a very fast recovery time of 6 ps extracted under large signal operation conditions. These unique qualities are achieved by combining lateral topology, AlGaN back-barrier epitaxial structure, fully recessed Schottky anode (ϕB = 0.62 eV) and anode field plate extension.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany