Evaluation of 600V GaN and SiC Schottky Diodes at Different Temperatures

N. Badawi1, E. Bahat-Treidel2, S. Dieckerhoff1, O. Hilt2, J. Würfl2

Published in:

15th European Conference on Power Electronics and Applications (EPE), Lille, France, Sep 2-6, pp. 1-7 (2013).

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This paper presents a newly developed 600V/2A Gallium Nitride (GaN) Schottky diode feasible for high frequency operation. Static and dynamic characteristics of the diode are experimentally evaluated at different temperatures and compared to a commercially available 600V/2A Silicon Carbide (SiC) Schottky diode. The test for both diodes is carried out under identical conditions. The proposed GaN diode shows very good switching properties and the potential to operate at very high switching frequencies and high temperatures with low switching loss.

1 Technical University of Berlin, Power Electronics Research Group, Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, D-12489 Berlin, Germany


Gallium Nitride (GaN), Schottky Diode, Device Characterisation, Wide Bandgap Devices