Enhancement of light extraction in ultraviolet light-emitting diodes using nanopixel contact design with Al reflector

N. Lobo1, H. Rodriguez2 , A. Knauer2, M. Hoppe2, S. Einfeldt2, P. Vogt1, M. Weyers2, and M. Kneissl1,2

Published in:

Appl. Phys. Lett., vol. 96, no. 081109 (2010).

© 2010 American Institute of Physics. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the American Institute of Physics..

Abstract:

We report on a nanopixel contact design for nitride-based ultraviolet light-emitting diodes to enhance light extraction. The structure consists of arrays of Pd ohmic contact pixels and an overlying Al reflector layer. Based on this design a twofold increase in the light output, compared to large area Pd square contacts is demonstrated. Theoretical calculations and experiments reveal that a nanopixel spacing of 1 µm or less is required to enable current overlap in the region between the nanopixels due to current spreading in the p-GaN layer and to ensure current injection into the entire active region. Light emitted in the region between the nanopixels will be reflected by the Al layer enhancing the light output. The dependence of the light extraction on the nanopixel size and spacing is investigated.

1 Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
2 Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany