Electronic Frequency Tuning of a High-Power 2.45GHz GaN Oscillator

C. Bansleben and W. Heinrich

Published in:

IEEE MTT-S Int. Microw. Symp. Dig., Phoenix, USA, May 17-22, WE4B-1 (2015).

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Abstract:

High-power solid-state microwave oscillators are useful for various applications. However, electronic frequency tuning has been a problem so far, due to the high voltage and current swings involved. This paper presents a solution for a high-power 2.45 GHz oscillator, using GaN transistors and SiC varactors. The VCO provides a peak output power of 56 W which can be tuned within the entire 2.45 GHz ISM band with 2.7 dB power ripple and an efficiency of more than 35%.

Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Straße 4, 12489 Berlin, Germany

Index Terms:

power oscillator, VCO, GaN, Schottky, SiC, varactor, generator.